N-Channel MOSFET, 17 mA, 600 V Depletion, 3-Pin SOT-23 Infineon BSS126H6327XTSA2
- RS Stock No.:
- 826-8245
- Mfr. Part No.:
- BSS126H6327XTSA2
- Brand:
- Infineon
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- RS Stock No.:
- 826-8245
- Mfr. Part No.:
- BSS126H6327XTSA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17 mA | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 700 Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Threshold Voltage | 1.6V | |
| Minimum Gate Threshold Voltage | 2.7V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 1.3mm | |
| Typical Gate Charge @ Vgs | 1.4 nC @ 5 V | |
| Length | 2.9mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1mm | |
| Series | SIPMOS | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 mA | ||
Maximum Drain Source Voltage 600 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 700 Ω | ||
Channel Mode Depletion | ||
Maximum Gate Threshold Voltage 1.6V | ||
Minimum Gate Threshold Voltage 2.7V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 1.3mm | ||
Typical Gate Charge @ Vgs 1.4 nC @ 5 V | ||
Length 2.9mm | ||
Maximum Operating Temperature +150 °C | ||
Height 1mm | ||
Series SIPMOS | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
Infineon SIPMOS Series MOSFET, 600V Maximum Drain Source Voltage, 500mW Maximum Power Dissipation - BSS126H6327XTSA2
This MOSFET is a high-voltage switching transistor designed for surface-mount applications where a compact footprint and extended temperature range are required. It operates as an N-channel depletion device and provides switching and control functionality in power conversion and protection circuits while withstanding harsh ambient conditions.
Features and Benefits:
• 600V drain-source rating enables high-voltage switching
• 700Ω maximum Rds minimises leakage control in the off state
• 21mA continuous drain current supports low-current control loops
• 1.4nC typical gate charge permits faster gate transitions
• 20V gate-source tolerance allows a wide gate drive range
• 500mW power dissipation handles modest thermal loads
• 700Ω maximum Rds minimises leakage control in the off state
• 21mA continuous drain current supports low-current control loops
• 1.4nC typical gate charge permits faster gate transitions
• 20V gate-source tolerance allows a wide gate drive range
• 500mW power dissipation handles modest thermal loads
Applications
• Suitable for high-voltage gate protection circuits
• Ideal for low-current flyback or snubber networks
• Used with automotive sensors and control modules
• Can be used for switch-off elements in power supplies
• Suitable for surface-mount prototypes and compact assemblies
• Ideal for low-current flyback or snubber networks
• Used with automotive sensors and control modules
• Can be used for switch-off elements in power supplies
• Suitable for surface-mount prototypes and compact assemblies
What package type is used for compact PCB mounting?
It is supplied in a small SOT-23 surface-mount package for dense board layouts.
How does it perform across temperature extremes?
The device is specified to operate from -55°C up to 150°C for broad environmental ranges.
What is the diode forward characteristic for reverse conduction considerations?
The intrinsic diode has a forward voltage of 1.2V relevant when the body diode conducts.
What pin configuration and count should I expect when designing footprints?
The device utilises three pins, consistent with single-transistor SOT-23 layouts.
