N-Channel MOSFET, 17 mA, 600 V Depletion, 3-Pin SOT-23 Infineon BSS126H6327XTSA2

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Each (In a Pack of 25)

£0.279

(exc. VAT)

£0.335

(inc. VAT)

RS Stock No.:
826-8245
Mfr. Part No.:
BSS126H6327XTSA2
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 mA

Maximum Drain Source Voltage

600 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

700 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1.6V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Width

1.3mm

Typical Gate Charge @ Vgs

1.4 nC @ 5 V

Length

2.9mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Series

SIPMOS

COO (Country of Origin):
CN

Infineon SIPMOS® N-Channel MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.