ROHM P-Channel MOSFET, 2.5 A, 12 V, 3-Pin TSMT RZR025P01TL
- RS Stock No.:
- 826-7835
- Mfr. Part No.:
- RZR025P01TL
- Brand:
- ROHM
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 826-7835
- Mfr. Part No.:
- RZR025P01TL
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | ROHM | |
Channel Type | P | |
Maximum Continuous Drain Current | 2.5 A | |
Maximum Drain Source Voltage | 12 V | |
Package Type | TSMT | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 220 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 1 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -10 V, +10 V | |
Transistor Material | Si | |
Length | 2.9mm | |
Typical Gate Charge @ Vgs | 13 nC @ 4.5 V | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Width | 1.6mm | |
Height | 0.85mm | |
Select all | ||
---|---|---|
Brand ROHM | ||
Channel Type P | ||
Maximum Continuous Drain Current 2.5 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type TSMT | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 220 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -10 V, +10 V | ||
Transistor Material Si | ||
Length 2.9mm | ||
Typical Gate Charge @ Vgs 13 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 1.6mm | ||
Height 0.85mm | ||
- COO (Country of Origin):
- TH
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor