N-Channel MOSFET, 3.2 A, 650 V, 3-Pin DPAK Infineon SPD03N60C3BTMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

3.2 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

13 nC @ 10 V

Width

6.223mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Minimum Operating Temperature

-55 °C

Series

CoolMOS C3

Height

2.413mm