N-Channel MOSFET, 40 A, 25 V, 8-Pin TSDSON Infineon BSZ036NE2LSATMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

25 V

Package Type

TSDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.4mm

Typical Gate Charge @ Vgs

16 nC @ 10 V

Width

3.4mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Series

OptiMOS