Name: Infineon OptiMOS™ 3 N-Channel MOSFET, 90 A, 40 V, 3-Pin DPAK IPD036N04LGBTMA1
Brand: Infineon
SKU: 825-9364
Price: 1.13 GBP
Availability: Discontinued

Infineon OptiMOS™3 Power MOSFETs, up to 40V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	90 A
	Maximum Drain Source Voltage	40 V
	Series	OptiMOS™ 3
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	4.9 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	94 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+175 °C
	Length	6.73mm
	Typical Gate Charge @ Vgs	59 nC @ 10 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	6.22mm
	Height	2.41mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 90 A
	Maximum Drain Source Voltage 40 V
	Series OptiMOS™ 3
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 4.9 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 94 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +175 °C
	Length 6.73mm
	Typical Gate Charge @ Vgs 59 nC @ 10 V
	Number of Elements per Chip 1
	Transistor Material Si
	Width 6.22mm
	Height 2.41mm
	Minimum Operating Temperature -55 °C

Infineon OptiMOS™ 3 N-Channel MOSFET, 90 A, 40 V, 3-Pin DPAK IPD036N04LGBTMA1

Infineon OptiMOS™3 Power MOSFETs, up to 40V

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