N-Channel MOSFET, 5.1 A, 900 V, 3-Pin DPAK Infineon IPD90R1K2C3BTMA1

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
825-9180
Mfr. Part No.:
IPD90R1K2C3BTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5.1 A

Maximum Drain Source Voltage

900 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Number of Elements per Chip

1

Width

6.22mm

Transistor Material

Si

Height

2.41mm

Minimum Operating Temperature

-55 °C

Series

CoolMOS C3

RoHS Status: Exempt

Infineon CoolMOS™C3 Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.