N-Channel MOSFET, 5.1 A, 900 V, 3-Pin DPAK Infineon IPD90R1K2C3BTMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5.1 A

Maximum Drain Source Voltage

900 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

28 nC @ 10 V

Length

6.73mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

6.22mm

Transistor Material

Si

Height

2.41mm

Minimum Operating Temperature

-55 °C

Series

CoolMOS C3