N-Channel MOSFET, 21 A, 650 V, 3-Pin D2PAK Infineon IPB60R165CPATMA1

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Packaging Options:
RS Stock No.:
825-9178
Mfr. Part No.:
IPB60R165CPATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

192 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

9.45mm

Length

10.31mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Series

CoolMOS CP

Height

4.572mm

Minimum Operating Temperature

-55 °C

RoHS Status: Exempt

Infineon CoolMOS™CP Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.