Infineon OptiMOS P P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON BSZ086P03NS3EGATMA1
- RS Stock No.:
- 825-9134P
- Mfr. Part No.:
- BSZ086P03NS3EGATMA1
- Brand:
- Infineon
Subtotal 20 units (supplied on a continuous strip)*
£8.56
(exc. VAT)
£10.28
(inc. VAT)
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In Stock
- 14,080 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 20 + | £0.428 |
*price indicative
- RS Stock No.:
- 825-9134P
- Mfr. Part No.:
- BSZ086P03NS3EGATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TSDSON | |
| Series | OptiMOS P | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 13.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.9V | |
| Minimum Gate Threshold Voltage | 3.1V | |
| Maximum Power Dissipation | 69 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Typical Gate Charge @ Vgs | 43.2 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Width | 3.4mm | |
| Number of Elements per Chip | 1 | |
| Length | 3.4mm | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TSDSON | ||
Series OptiMOS P | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 13.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.9V | ||
Minimum Gate Threshold Voltage 3.1V | ||
Maximum Power Dissipation 69 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Typical Gate Charge @ Vgs 43.2 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 3.4mm | ||
Number of Elements per Chip 1 | ||
Length 3.4mm | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Not Applicable
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
