P-Channel MOSFET, 14.9 A, 30 V, 8-Pin DSO Infineon BSO301SPHXUMA1
- RS Stock No.:
- 825-9109
- Mfr. Part No.:
- BSO301SPHXUMA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 825-9109
- Mfr. Part No.:
- BSO301SPHXUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 14.9 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | DSO | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 12 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4mm | |
| Typical Gate Charge @ Vgs | 102 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.65mm | |
| Series | OptiMOS P | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 14.9 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type DSO | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 12 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4mm | ||
Typical Gate Charge @ Vgs 102 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.65mm | ||
Series OptiMOS P | ||
The Infineon BSO301SP H OptiMOS families include p-channel power MOSFETs. These device consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
P-Channel
Enhancement mode
Logic level
150°C operating temperature
Enhancement mode
Logic level
150°C operating temperature