Name: P-Channel MOSFET, 14.9 A, 30 V, 8-Pin DSO Infineon BSO301SPHXUMA1
Brand: Infineon
SKU: 825-9109
Price: 1.24 GBP
Availability: Discontinued

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	14.9 A
	Maximum Drain Source Voltage	30 V
	Package Type	DSO
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	12 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	102 nC @ 10 V
	Length	5mm
	Maximum Operating Temperature	+150 °C
	Width	4mm
	Minimum Operating Temperature	-55 °C
	Series	OptiMOS P
	Height	1.65mm

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 14.9 A
	Maximum Drain Source Voltage 30 V
	Package Type DSO
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 12 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 102 nC @ 10 V
	Length 5mm
	Maximum Operating Temperature +150 °C
	Width 4mm
	Minimum Operating Temperature -55 °C
	Series OptiMOS P
	Height 1.65mm

The Infineon BSO301SP H OptiMOS families include p-channel power MOSFETs. These device consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

P-Channel
Enhancement mode
Logic level
150°C operating temperature