Dual N-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 Infineon BSD840NH6327XTSA1
- RS Stock No.:
- 823-5493
- Mfr. Part No.:
- BSD840NH6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 50 units)*
£15.75
(exc. VAT)
£18.90
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | £0.315 | £15.75 |
| 100 - 200 | £0.189 | £9.45 |
| 250 - 450 | £0.184 | £9.20 |
| 500 - 950 | £0.18 | £9.00 |
| 1000 + | £0.175 | £8.75 |
*price indicative
- RS Stock No.:
- 823-5493
- Mfr. Part No.:
- BSD840NH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 880 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-363 (SC-88) | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 560 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.75V | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Typical Gate Charge @ Vgs | 0.26 nC @ 2.5 V | |
| Length | 2mm | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.25mm | |
| Series | OptiMOS 2 | |
| Height | 0.8mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 880 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-363 (SC-88) | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 560 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.75V | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Typical Gate Charge @ Vgs 0.26 nC @ 2.5 V | ||
Length 2mm | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 1.25mm | ||
Series OptiMOS 2 | ||
Height 0.8mm | ||
Minimum Operating Temperature -55 °C | ||