Dual N-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 Infineon BSD840NH6327XTSA1

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Packaging Options:
RS Stock No.:
823-5493
Mfr. Part No.:
BSD840NH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

880 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-363 (SC-88)

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

560 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.75V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

500 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Width

1.25mm

Typical Gate Charge @ Vgs

0.26 nC @ 2.5 V

Transistor Material

Si

Length

2mm

Series

OptiMOS 2

Minimum Operating Temperature

-55 °C

Height

0.8mm

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