Vishay SQ Rugged P-Channel MOSFET, 50 A, 30 V, 3-Pin D2PAK SQM50P03-07_GE3
- RS Stock No.:
- 819-3955
- Mfr. Part No.:
- SQM50P03-07_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
£10.00
(exc. VAT)
£12.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £2.00 | £10.00 |
| 50 - 120 | £1.88 | £9.40 |
| 125 - 245 | £1.80 | £9.00 |
| 250 - 495 | £1.60 | £8.00 |
| 500 + | £1.50 | £7.50 |
*price indicative
- RS Stock No.:
- 819-3955
- Mfr. Part No.:
- SQM50P03-07_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | SQ Rugged | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 11 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.41mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 103.5 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 9.652mm | |
| Height | 4.826mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 30 V | ||
Series SQ Rugged | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 11 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.41mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 103.5 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Width 9.652mm | ||
Height 4.826mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- TW