N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK Vishay SQM120N06-3m5L_GE3

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Packaging Options:
RS Stock No.:
819-3945
Mfr. Part No.:
SQM120N06-3m5L_GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

220 nC @ 10 V

Length

10.41mm

Transistor Material

Si

Width

9.652mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Series

SQ Rugged

Automotive Standard

AEC-Q101

Height

4.826mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
TW

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor


The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Advantages of SQ Rugged Series MOSFETs


• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options

Approvals

AEC-Q101


MOSFET Transistors, Vishay Semiconductor