Vishay ThunderFET N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 SIA416DJ-T1-GE3
- RS Stock No.:
- 818-1441P
- Mfr. Part No.:
- SIA416DJ-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 200 units (supplied on a reel)*
£38.00
(exc. VAT)
£46.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 19 April 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 200 - 480 | £0.19 |
| 500 - 980 | £0.176 |
| 1000 - 1980 | £0.172 |
| 2000 + | £0.168 |
*price indicative
- RS Stock No.:
- 818-1441P
- Mfr. Part No.:
- SIA416DJ-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11.3 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | PowerPAK SC-70 | |
| Series | ThunderFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 130 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.6V | |
| Maximum Power Dissipation | 19 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 2.15mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 6.5 nC @ 10 V | |
| Length | 2.15mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.75mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 11.3 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type PowerPAK SC-70 | ||
Series ThunderFET | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 130 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.6V | ||
Maximum Power Dissipation 19 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 2.15mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 6.5 nC @ 10 V | ||
Length 2.15mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor