P-Channel MOSFET, 6.2 A, 30 V, 4-Pin MICRO FOOT Vishay SI8487DB-T1-E1
- RS Stock No.:
- 818-1429
- Mfr. Part No.:
- SI8487DB-T1-E1
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tape of 20 units)*
£7.38
(exc. VAT)
£8.86
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tape* |
|---|---|---|
| 20 - 40 | £0.369 | £7.38 |
| 60 - 180 | £0.206 | £4.12 |
| 200 - 380 | £0.197 | £3.94 |
| 400 - 780 | £0.196 | £3.92 |
| 800 + | £0.195 | £3.90 |
*price indicative
- RS Stock No.:
- 818-1429
- Mfr. Part No.:
- SI8487DB-T1-E1
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 6.2 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | MICRO FOOT | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 45 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 2.7 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Length | 1.6mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.6mm | |
| Typical Gate Charge @ Vgs | 52 nC @ 10 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Height | 0.31mm | |
| Series | TrenchFET | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 6.2 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type MICRO FOOT | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 45 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 2.7 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Length 1.6mm | ||
Maximum Operating Temperature +150 °C | ||
Width 1.6mm | ||
Typical Gate Charge @ Vgs 52 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Height 0.31mm | ||
Series TrenchFET | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN