Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SI7900AEDN-T1-GE3

RS Stock No.:: 818-1416
Mfr. Part No.:: SI7900AEDN-T1-GE3
Brand:: Vishay

Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SI7900AEDN-T1-GE3

Available to back order for despatch 04/11/2024

Price Each (In a Pack of 10)

£0.808

(exc. VAT)

£0.97

(inc. VAT)

Units	Per unit	Per Pack*
10 - 90	£0.808	£8.08
100 - 240	£0.767	£7.67
250 - 490	£0.646	£6.46
500 - 990	£0.606	£6.06
1000 +	£0.566	£5.66

*price indicative

RS Stock No.:: 818-1416
Mfr. Part No.:: SI7900AEDN-T1-GE3
Brand:: Vishay

Technical Reference

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	6 A
Maximum Drain Source Voltage	20 V
Package Type	PowerPAK 1212-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	36 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.5 W
Transistor Configuration	Common Drain
Maximum Gate Source Voltage	-12 V, +12 V
Typical Gate Charge @ Vgs	10.5 nC @ 4.5 V
Length	3.15mm
Maximum Operating Temperature	+150 °C
Width	3.15mm
Transistor Material	Si
Number of Elements per Chip	2
Height	1.07mm
Minimum Operating Temperature	-55 °C