Nexperia Dual N/P-Channel MOSFET, 220 mA, 400 mA, 30 V, 6-Pin SOT-666 NX3008CBKV,115
- RS Stock No.:
- 816-0567
- Mfr. Part No.:
- NX3008CBKV,115
- Brand:
- Nexperia
Subtotal (1 pack of 50 units)*
£13.60
(exc. VAT)
£16.30
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 50 + | £0.272 | £13.60 |
*price indicative
- RS Stock No.:
- 816-0567
- Mfr. Part No.:
- NX3008CBKV,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 220 mA, 400 mA | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-666 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 2.8 Ω, 7.8 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.1V | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Number of Elements per Chip | 2 | |
| Length | 1.7mm | |
| Typical Gate Charge @ Vgs | 0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.3mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.6mm | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 220 mA, 400 mA | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-666 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 2.8 Ω, 7.8 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.1V | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Number of Elements per Chip 2 | ||
Length 1.7mm | ||
Typical Gate Charge @ Vgs 0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Width 1.3mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 0.6mm | ||
- COO (Country of Origin):
- HK