Dual N-Channel MOSFET, 13.8 A, 14 A, 30 V, 6-Pin PowerPAIR Vishay SIZ702DT-T1-GE3
- RS Stock No.:
- 814-1326
- Mfr. Part No.:
- SIZ702DT-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
£8.35
(exc. VAT)
£10.02
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 290 | £0.835 | £8.35 |
| 300 - 590 | £0.634 | £6.34 |
| 600 - 1490 | £0.545 | £5.45 |
| 1500 - 2990 | £0.441 | £4.41 |
| 3000 + | £0.44 | £4.40 |
*price indicative
- RS Stock No.:
- 814-1326
- Mfr. Part No.:
- SIZ702DT-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 13.8 A, 14 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PowerPAIR | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 14.5 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 27 W, 30 W | |
| Transistor Configuration | Series | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 3.81mm | |
| Length | 6.08mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V | |
| Number of Elements per Chip | 2 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.75mm | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 13.8 A, 14 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerPAIR | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 14.5 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 27 W, 30 W | ||
Transistor Configuration Series | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 3.81mm | ||
Length 6.08mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 14 nC @ 10 V | ||
Number of Elements per Chip 2 | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
- COO (Country of Origin):
- CN