N-Channel MOSFET, 20 A, 25 V, 8-Pin PowerPAK SO Vishay SIR850DP-T1-GE3

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
814-1294
Mfr. Part No.:
SIR850DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

25 V

Package Type

PowerPAK SO

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

41.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

5.99mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Number of Elements per Chip

1

Height

1.12mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor



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