N-Channel MOSFET, 13.4 A, 25 V, 8-Pin PowerPAK SO Vishay SIR412DP-T1-GE3

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
814-1263
Mfr. Part No.:
SIR412DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

13.4 A

Maximum Drain Source Voltage

25 V

Package Type

PowerPAK SO

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

15.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.25mm

Maximum Operating Temperature

+150 °C

Width

5.26mm

Typical Gate Charge @ Vgs

10.7 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.12mm

COO (Country of Origin):
CN

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor



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