Vishay TrenchFET P-Channel MOSFET, 10.4 A, 30 V, 6-Pin SOT-363 SIA449DJ-T1-GE3
- RS Stock No.:
- 814-1213P
- Mfr. Part No.:
- SIA449DJ-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 200 units (supplied on a reel)*
£50.00
(exc. VAT)
£60.00
(inc. VAT)
FREE delivery for orders over £50.00
Being discontinued
- Final 2,940 unit(s), ready to ship
Units | Per unit |
|---|---|
| 200 - 480 | £0.25 |
| 500 - 980 | £0.21 |
| 1000 - 1980 | £0.186 |
| 2000 + | £0.136 |
*price indicative
- RS Stock No.:
- 814-1213P
- Mfr. Part No.:
- SIA449DJ-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 10.4 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-363 | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 38 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 19 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 2.15mm | |
| Width | 2.15mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 0.8mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 10.4 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-363 | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 38 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 19 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 48 nC @ 10 V | ||
Transistor Material Si | ||
Length 2.15mm | ||
Width 2.15mm | ||
Maximum Operating Temperature +150 °C | ||
Height 0.8mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
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