Vishay Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC SI4599DY-T1-GE3

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Subtotal 200 units (supplied on a reel)*

£101.40

(exc. VAT)

£121.60

(inc. VAT)

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Being discontinued
  • Final 9,680 unit(s), ready to ship
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200 - 480£0.507
500 - 980£0.428
1000 - 1980£0.395
2000 +£0.329

*price indicative

Packaging Options:
RS Stock No.:
812-3233P
Mfr. Part No.:
SI4599DY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.7 A, 6.8 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

42.5 mΩ, 62 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3 W, 3.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

11.7 nC @ 10 V, 25 nC @ 10 V

Width

4mm

Number of Elements per Chip

2

Length

5mm

Transistor Material

Si

Height

1.55mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

Dual N/P-Channel MOSFET, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor