Dual N/P-Channel MOSFET, 6.4 A, 12 A, 8 V, 30 V, 8-Pin SOIC Vishay SI4501BDY-T1-GE3
- RS Stock No.:
- 812-3227
- Mfr. Part No.:
- SI4501BDY-T1-GE3
- Brand:
- Vishay
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 812-3227
- Mfr. Part No.:
- SI4501BDY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 6.4 A, 12 A | |
| Maximum Drain Source Voltage | 8 V, 30 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 20 mΩ, 37 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.45V | |
| Maximum Power Dissipation | 3.1 W, 4.5 W | |
| Transistor Configuration | Common Drain | |
| Maximum Gate Source Voltage | -20 V, -8 V, +20 V, +8 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 2 | |
| Length | 5mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 16.5 nC @ 10 V, 27.5 nC @ 8 V | |
| Width | 4mm | |
| Height | 1.55mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 6.4 A, 12 A | ||
Maximum Drain Source Voltage 8 V, 30 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 20 mΩ, 37 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.45V | ||
Maximum Power Dissipation 3.1 W, 4.5 W | ||
Transistor Configuration Common Drain | ||
Maximum Gate Source Voltage -20 V, -8 V, +20 V, +8 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Length 5mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 16.5 nC @ 10 V, 27.5 nC @ 8 V | ||
Width 4mm | ||
Height 1.55mm | ||
Minimum Operating Temperature -55 °C | ||
Dual N/P-Channel MOSFET, Vishay Semiconductor
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