Dual N/P-Channel MOSFET, 6.4 A, 12 A, 8 V, 30 V, 8-Pin SOIC Vishay SI4501BDY-T1-GE3

Stock information currently inaccessible
Packaging Options:
RS Stock No.:
812-3227
Mfr. Part No.:
SI4501BDY-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

6.4 A, 12 A

Maximum Drain Source Voltage

8 V, 30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ, 37 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

3.1 W, 4.5 W

Transistor Configuration

Common Drain

Maximum Gate Source Voltage

-20 V, -8 V, +20 V, +8 V

Typical Gate Charge @ Vgs

16.5 nC @ 10 V, 27.5 nC @ 8 V

Width

4mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Number of Elements per Chip

2

Height

1.55mm

Minimum Operating Temperature

-55 °C

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy