Vishay Dual P-Channel MOSFET, 2.3 A, 30 V, 6-Pin TSOP-6 SI3993CDV-T1-GE3
- RS Stock No.:
- 812-3189P
- Mfr. Part No.:
- SI3993CDV-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 200 units (supplied on a reel)*
£57.80
(exc. VAT)
£69.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,560 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 200 - 480 | £0.289 |
| 500 - 980 | £0.243 |
| 1000 - 1980 | £0.215 |
| 2000 + | £0.195 |
*price indicative
- RS Stock No.:
- 812-3189P
- Mfr. Part No.:
- SI3993CDV-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2.3 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TSOP-6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 188 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 1.4 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.7mm | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 5.2 nC @ 10 V | |
| Length | 3.1mm | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 2.3 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TSOP-6 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 188 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 1.4 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Width 1.7mm | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 5.2 nC @ 10 V | ||
Length 3.1mm | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
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