N-Channel MOSFET, 5.8 A, 30 V, 3-Pin SOT-23 Vishay SI2366DS-T1-GE3

RS Stock No.:: 812-3132P
Mfr. Part No.:: SI2366DS-T1-GE3
Brand:: Vishay

N-Channel MOSFET, 5.8 A, 30 V, 3-Pin SOT-23 Vishay SI2366DS-T1-GE3

3560 In stock - FREE next working day delivery available

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

£0.303

(exc. VAT)

£0.364

(inc. VAT)

Units	Per unit
20 +	£0.303

RS Stock No.:: 812-3132P
Mfr. Part No.:: SI2366DS-T1-GE3
Brand:: Vishay

Si2366DS, N-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.8 A
Maximum Drain Source Voltage	30 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	42 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	2.1 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Width	1.4mm
Typical Gate Charge @ Vgs	6.4 nC @ 10 V
Length	3.04mm
Transistor Material	Si
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	1.02mm

N-Channel MOSFET, 5.8 A, 30 V, 3-Pin SOT-23 Vishay SI2366DS-T1-GE3

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor