Dual P-Channel MOSFET, 1.2 A, 12 V, 6-Pin SOT-363 Vishay Si1965DH-T1-GE3
- RS Stock No.:
- 812-3104
- Mfr. Part No.:
- Si1965DH-T1-GE3
- Brand:
- Vishay
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 812-3104
- Mfr. Part No.:
- Si1965DH-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | P | |
Maximum Continuous Drain Current | 1.2 A | |
Maximum Drain Source Voltage | 12 V | |
Package Type | SOT-363 (SC-88) | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 710 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.4V | |
Maximum Power Dissipation | 1.25 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -8 V, +8 V | |
Length | 2.2mm | |
Typical Gate Charge @ Vgs | 2.8 nC @ 8 V | |
Number of Elements per Chip | 2 | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Width | 1.35mm | |
Height | 1mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.2 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type SOT-363 (SC-88) | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 710 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1.25 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Length 2.2mm | ||
Typical Gate Charge @ Vgs 2.8 nC @ 8 V | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 1.35mm | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
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