Dual P-Channel MOSFET, 1.2 A, 12 V, 6-Pin SOT-363 Vishay Si1965DH-T1-GE3
- RS Stock No.:
- 812-3104
- Mfr. Part No.:
- Si1965DH-T1-GE3
- Brand:
- Vishay
Stock information currently inaccessible
- RS Stock No.:
- 812-3104
- Mfr. Part No.:
- Si1965DH-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.2 A | |
| Maximum Drain Source Voltage | 12 V | |
| Package Type | SOT-363 (SC-88) | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 710 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 1.25 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.35mm | |
| Transistor Material | Si | |
| Length | 2.2mm | |
| Typical Gate Charge @ Vgs | 2.8 nC @ 8 V | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.2 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type SOT-363 (SC-88) | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 710 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 1.25 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Width 1.35mm | ||
Transistor Material Si | ||
Length 2.2mm | ||
Typical Gate Charge @ Vgs 2.8 nC @ 8 V | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN