Dual P-Channel MOSFET, 1.2 A, 12 V, 6-Pin SOT-363 Vishay Si1965DH-T1-GE3

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Subtotal (1 pack of 50 units)*

£2.15

(exc. VAT)

£2.60

(inc. VAT)

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50 +£0.043£2.15

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Packaging Options:
RS Stock No.:
812-3104
Mfr. Part No.:
Si1965DH-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.2 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-363 (SC-88)

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

710 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

2

Transistor Material

Si

Width

1.35mm

Typical Gate Charge @ Vgs

2.8 nC @ 8 V

Length

2.2mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

COO (Country of Origin):
CN

Dual P-Channel MOSFET, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor