Wolfspeed SiC N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-247 C2M0080120D
- RS Stock No.:
- 809-8991P
- Mfr. Part No.:
- C2M0080120D
- Brand:
- Wolfspeed
Bulk discount available
Subtotal 6 units (supplied in a tube)*
£120.66
(exc. VAT)
£144.78
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 380 unit(s) ready to ship
- Plus 999,999,619 unit(s) shipping from 27 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 6 - 14 | £20.11 |
| 15 + | £19.62 |
*price indicative
- RS Stock No.:
- 809-8991P
- Mfr. Part No.:
- C2M0080120D
- Brand:
- Wolfspeed
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 31 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 208 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.2V | |
| Minimum Gate Threshold Voltage | 1.7V | |
| Maximum Power Dissipation | 208 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -10 V, +25 V | |
| Length | 16.13mm | |
| Width | 5.21mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 49.2 nC @ 20 V | |
| Transistor Material | SiC | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 21.1mm | |
Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Channel Type N | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 208 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.2V | ||
Minimum Gate Threshold Voltage 1.7V | ||
Maximum Power Dissipation 208 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -10 V, +25 V | ||
Length 16.13mm | ||
Width 5.21mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 49.2 nC @ 20 V | ||
Transistor Material SiC | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 21.1mm | ||