UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	24 A
	Maximum Drain Source Voltage	500 V
	Package Type	TO-3PN
	Series	UniFET
	Mounting Type	Through Hole
	Pin Count	2
	Maximum Drain Source Resistance	190 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	270 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Width	5mm
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	65 nC @ 10 V
	Length	15.8mm
	Number of Elements per Chip	1
	Height	20.1mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 24 A
	Maximum Drain Source Voltage 500 V
	Package Type TO-3PN
	Series UniFET
	Mounting Type Through Hole
	Pin Count 2
	Maximum Drain Source Resistance 190 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 270 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Width 5mm
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 65 nC @ 10 V
	Length 15.8mm
	Number of Elements per Chip 1
	Height 20.1mm
	Minimum Operating Temperature -55 °C

onsemi UniFET N-Channel MOSFET, 24 A, 500 V, 2-Pin TO-3PN FDA24N50

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

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