onsemi PowerTrench N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK FDD8870
- RS Stock No.:
- 809-0950
- Mfr. Part No.:
- FDD8870
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£1.94
(exc. VAT)
£2.33
(inc. VAT)
FREE delivery for orders over £50.00
- Final 8,740 unit(s), ready to ship
Units | Per unit | Per Pack* |
---|---|---|
5 + | £0.388 | £1.94 |
*price indicative
- RS Stock No.:
- 809-0950
- Mfr. Part No.:
- FDD8870
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 160 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | DPAK (TO-252) | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 6.3 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1.2V | |
Maximum Power Dissipation | 160 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Width | 6.22mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 91 nC @ 10 V | |
Length | 6.73mm | |
Height | 2.39mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 160 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type DPAK (TO-252) | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6.3 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 160 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 6.22mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 91 nC @ 10 V | ||
Length 6.73mm | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive N-Channel MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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