onsemi UniFET N-Channel MOSFET, 11.5 A, 500 V, 3-Pin D2PAK FDB12N50TM

Subtotal (1 pack of 5 units)*

£1.18

(exc. VAT)

£1.415

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Pack*
5 +	£0.236	£1.18

*price indicative

Specifications

Technical Reference

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	N
	Maximum Continuous Drain Current	11.5 A
	Maximum Drain Source Voltage	500 V
	Package Type	D2PAK (TO-263)
	Series	UniFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	650 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	165 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Length	10.67mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	22 nC @ 10 V
	Width	9.65mm
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	4.83mm

	Select all
	Brand ON Semiconductor
	Channel Type N
	Maximum Continuous Drain Current 11.5 A
	Maximum Drain Source Voltage 500 V
	Package Type D2PAK (TO-263)
	Series UniFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 650 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 165 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Length 10.67mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 22 nC @ 10 V
	Width 9.65mm
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 4.83mm

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