onsemi UltraFET N-Channel MOSFET, 33 A, 100 V, 3-Pin D2PAK HUF75631S3ST

Stock information currently inaccessible

Specifications

Technical Reference

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	N
	Maximum Continuous Drain Current	33 A
	Maximum Drain Source Voltage	100 V
	Series	UltraFET
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	40 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	120 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	4.83mm
	Length	10.67mm
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	66 nC @ 20 V
	Height	11.33mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand ON Semiconductor
	Channel Type N
	Maximum Continuous Drain Current 33 A
	Maximum Drain Source Voltage 100 V
	Series UltraFET
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 40 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 120 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Transistor Material Si
	Width 4.83mm
	Length 10.67mm
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 66 nC @ 20 V
	Height 11.33mm
	Minimum Operating Temperature -55 °C

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy