N-Channel MOSFET, 3.2 A, 300 V, 3-Pin TO-220 onsemi FQP3N30
- RS Stock No.:
- 807-5872
- Mfr. Part No.:
- FQP3N30
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
£8.15
(exc. VAT)
£9.78
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.815 | £8.15 |
| 100 - 490 | £0.645 | £6.45 |
| 500 - 990 | £0.548 | £5.48 |
| 1000 - 1990 | £0.445 | £4.45 |
| 2000 + | £0.437 | £4.37 |
*price indicative
- RS Stock No.:
- 807-5872
- Mfr. Part No.:
- FQP3N30
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.2 A | |
| Maximum Drain Source Voltage | 300 V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.2 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 55 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Width | 4.7mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 5.5 nC @ 10 V | |
| Height | 16.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Series | QFET | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.2 A | ||
Maximum Drain Source Voltage 300 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.2 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 55 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Width 4.7mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 5.5 nC @ 10 V | ||
Height 16.3mm | ||
Minimum Operating Temperature -55 °C | ||
Series QFET | ||