Dual N/P-Channel MOSFET, 5 A, 7 A, 35 V, 8-Pin SOIC onsemi FDS8960C

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Specifications

Technical Reference

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	N, P
	Maximum Continuous Drain Current	5 A, 7 A
	Maximum Drain Source Voltage	35 V
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	37 mΩ, 87 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	1.6 W, 2 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-25 V, -20 V, +20 V, +25 V
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Width	3.9mm
	Length	4.9mm
	Typical Gate Charge @ Vgs	5.5 nC @ 5 V, 5.7 nC @ 5 V
	Number of Elements per Chip	2
	Series	PowerTrench
	Minimum Operating Temperature	-55 °C
	Height	1.575mm

	Select all
	Brand ON Semiconductor
	Channel Type N, P
	Maximum Continuous Drain Current 5 A, 7 A
	Maximum Drain Source Voltage 35 V
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 37 mΩ, 87 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 1.6 W, 2 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -25 V, -20 V, +20 V, +25 V
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Width 3.9mm
	Length 4.9mm
	Typical Gate Charge @ Vgs 5.5 nC @ 5 V, 5.7 nC @ 5 V
	Number of Elements per Chip 2
	Series PowerTrench
	Minimum Operating Temperature -55 °C
	Height 1.575mm

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