onsemi PowerTrench Dual N-Channel MOSFET, 4.5 A, 100 V, 8-Pin SOIC FDS3992
- RS Stock No.:
- 806-3649
- Mfr. Part No.:
- FDS3992
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£6.14
(exc. VAT)
£7.37
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 2,435 unit(s) shipping from 12 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £1.228 | £6.14 |
| 25 - 120 | £1.128 | £5.64 |
| 125 - 620 | £1.106 | £5.53 |
| 625 - 1245 | £1.084 | £5.42 |
| 1250 + | £1.002 | £5.01 |
*price indicative
- RS Stock No.:
- 806-3649
- Mfr. Part No.:
- FDS3992
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.5 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 123 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 3.9mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V | |
| Length | 4.9mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.575mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.5 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 123 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 3.9mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 11 nC @ 10 V | ||
Length 4.9mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.575mm | ||
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