N-Channel MOSFET, 120 A, 313 A, 60 V, 3-Pin TO-220 ON Semiconductor FDP020N06B_F102
- RS Stock No.:
- 806-3539
- Mfr. Part No.:
- FDP020N06B_F102
- Brand:
- ON Semiconductor
Discontinued
- RS Stock No.:
- 806-3539
- Mfr. Part No.:
- FDP020N06B_F102
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A, 313 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 333 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.36mm | |
| Typical Gate Charge @ Vgs | 206 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.672mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Series | PowerTrench | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.215mm | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A, 313 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 333 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.36mm | ||
Typical Gate Charge @ Vgs 206 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Width 4.672mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Series PowerTrench | ||
Minimum Operating Temperature -55 °C | ||
Height 15.215mm | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.