N-Channel MOSFET, 75 A, 60 V, 3-Pin TO-220 onsemi NDP7060
- RS Stock No.:
- 806-1249
- Mfr. Part No.:
- NDP7060
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 2 units)*
£9.92
(exc. VAT)
£11.90
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £4.96 | £9.92 |
| 10 - 18 | £4.155 | £8.31 |
| 20 - 98 | £3.95 | £7.90 |
| 100 - 198 | £3.58 | £7.16 |
| 200 + | £3.43 | £6.86 |
*price indicative
- RS Stock No.:
- 806-1249
- Mfr. Part No.:
- NDP7060
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 75 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 24 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 100 nC @ 10 V | |
| Width | 4.7mm | |
| Length | 10.67mm | |
| Transistor Material | Si | |
| Height | 16.3mm | |
| Minimum Operating Temperature | -65 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 75 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 24 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 100 nC @ 10 V | ||
Width 4.7mm | ||
Length 10.67mm | ||
Transistor Material Si | ||
Height 16.3mm | ||
Minimum Operating Temperature -65 °C | ||