IXYS Single HiperFET, Q3-Class 1 Type N-Channel MOSFET, 38 A, 1000 V Enhancement, 4-Pin SOT-227 IXFN44N100Q3
- RS Stock No.:
- 804-7577
- Distrelec Article No.:
- 302-53-373
- Mfr. Part No.:
- IXFN44N100Q3
- Brand:
- IXYS
Bulk discount available
Subtotal (1 unit)*
£48.41
(exc. VAT)
£58.09
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 1 | £48.41 |
| 2 - 4 | £42.55 |
| 5 - 9 | £41.44 |
| 10 - 29 | £40.37 |
| 30 + | £39.41 |
*price indicative
- RS Stock No.:
- 804-7577
- Distrelec Article No.:
- 302-53-373
- Mfr. Part No.:
- IXFN44N100Q3
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 1000V | |
| Package Type | SOT-227 | |
| Series | HiperFET, Q3-Class | |
| Mount Type | Screw | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 220mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Length | 38.23mm | |
| Height | 9.6mm | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 1000V | ||
Package Type SOT-227 | ||
Series HiperFET, Q3-Class | ||
Mount Type Screw | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 220mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Length 38.23mm | ||
Height 9.6mm | ||
Number of Elements per Chip 1 | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS