IXYS HiperFET, Polar3 N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

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Subtotal 1 unit (supplied in a tube)*

£16.42

(exc. VAT)

£19.70

(inc. VAT)

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Packaging Options:
RS Stock No.:
802-4344P
Mfr. Part No.:
IXFB110N60P3
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

600 V

Series

HiperFET, Polar3

Package Type

PLUS264

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

56 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.89 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Width

5.31mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

245 nC @ 10 V

Length

20.29mm

Number of Elements per Chip

1

Height

26.59mm

Minimum Operating Temperature

-55 °C

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