onsemi N-Channel MOSFET, 9 A, 60 V, 3-Pin DPAK NTD3055L170T4G
- RS Stock No.:
- 802-1493
- Mfr. Part No.:
- NTD3055L170T4G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 25 units)*
£11.575
(exc. VAT)
£13.90
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | £0.463 | £11.58 |
| 50 - 75 | £0.45 | £11.25 |
| 100 - 225 | £0.44 | £11.00 |
| 250 - 475 | £0.428 | £10.70 |
| 500 + | £0.418 | £10.45 |
*price indicative
- RS Stock No.:
- 802-1493
- Mfr. Part No.:
- NTD3055L170T4G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 170 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 28.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 4.7 nC @ 5 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.38mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 170 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 28.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Width 6.22mm | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 4.7 nC @ 5 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 2.38mm | ||