N-Channel MOSFET, 12 A, 60 V, 3-Pin IPAK onsemi NTD3055L104-1G
- RS Stock No.:
- 802-1014
- Mfr. Part No.:
- NTD3055L104-1G
- Brand:
- onsemi
Stock information currently inaccessible
- RS Stock No.:
- 802-1014
- Mfr. Part No.:
- NTD3055L104-1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | IPAK | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 104 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 48 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -15 V, +15 V | |
| Typical Gate Charge @ Vgs | 7.4 nC @ 5 V | |
| Width | 6.22mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Height | 2.38mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type IPAK | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 104 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -15 V, +15 V | ||
Typical Gate Charge @ Vgs 7.4 nC @ 5 V | ||
Width 6.22mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Height 2.38mm | ||
Minimum Operating Temperature -55 °C | ||