onsemi Isolated 2 Type P, Type N-Channel Power MOSFET, 7 A, 30 V Enhancement, 8-Pin ECH
- RS Stock No.:
- 802-0850P
- Mfr. Part No.:
- ECH8661-TL-H
- Brand:
- onsemi
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 802-0850P
- Mfr. Part No.:
- ECH8661-TL-H
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P, Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | ECH | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 39mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.79V | |
| Maximum Power Dissipation Pd | 1.3W | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 11.8nC | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.9mm | |
| Length | 2.9mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P, Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type ECH | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 39mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.79V | ||
Maximum Power Dissipation Pd 1.3W | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 11.8nC | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.9mm | ||
Length 2.9mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.