IXYS HiperFET, Q3-Class N-Channel MOSFET, 50 A, 300 V, 3-Pin TO-247 IXFH50N30Q3
- RS Stock No.:
- 801-1398
- Mfr. Part No.:
- IXFH50N30Q3
- Brand:
- IXYS
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 801-1398
- Mfr. Part No.:
- IXFH50N30Q3
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 300 V | |
| Series | HiperFET, Q3-Class | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 80 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 6.5V | |
| Maximum Power Dissipation | 690 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 5.3mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 16.26mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.26mm | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 300 V | ||
Series HiperFET, Q3-Class | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 80 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 6.5V | ||
Maximum Power Dissipation 690 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Width 5.3mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 65 nC @ 10 V | ||
Transistor Material Si | ||
Length 16.26mm | ||
Minimum Operating Temperature -55 °C | ||
Height 16.26mm | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS