IXYS HiperFET, Q3-Class N-Channel MOSFET, 62 A, 800 V, 3-Pin PLUS264 IXFB62N80Q3

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Packaging Options:
RS Stock No.:
801-1376P
Mfr. Part No.:
IXFB62N80Q3
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

62 A

Maximum Drain Source Voltage

800 V

Series

HiperFET, Q3-Class

Package Type

PLUS264

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

1.56 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Width

5.31mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

270 nC @ 10 V

Length

20.29mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

26.59mm

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