Nexperia N-Channel MOSFET, 100 A, 30 V, 3-Pin D2PAK PSMN4R3-30BL,118
- RS Stock No.:
- 798-2968P
- Mfr. Part No.:
- PSMN4R3-30BL,118
- Brand:
- Nexperia
Bulk discount available
Subtotal 25 units (supplied on a continuous strip)*
£20.05
(exc. VAT)
£24.05
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 21 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 - 45 | £0.802 |
| 50 - 245 | £0.778 |
| 250 - 495 | £0.77 |
| 500 + | £0.754 |
*price indicative
- RS Stock No.:
- 798-2968P
- Mfr. Part No.:
- PSMN4R3-30BL,118
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.15V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 103 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Width | 11mm | |
| Length | 10.3mm | |
| Typical Gate Charge @ Vgs | 41.5 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.5mm | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.15V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 103 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Width 11mm | ||
Length 10.3mm | ||
Typical Gate Charge @ Vgs 41.5 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 4.5mm | ||
- COO (Country of Origin):
- PH
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors