N-Channel MOSFET, 51 A, 100 V, 4-Pin SOT-669 Nexperia PSMN016-100YS,115
- RS Stock No.:
- 798-2858
- Mfr. Part No.:
- PSMN016-100YS,115
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 5 units)*
£3.35
(exc. VAT)
£4.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £0.67 | £3.35 |
| 25 - 45 | £0.642 | £3.21 |
| 50 - 245 | £0.618 | £3.09 |
| 250 - 495 | £0.592 | £2.96 |
| 500 + | £0.568 | £2.84 |
*price indicative
- RS Stock No.:
- 798-2858
- Mfr. Part No.:
- PSMN016-100YS,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 51 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SOT-669 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 29.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 117 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 42 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 4.1mm | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 51 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOT-669 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 29.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 117 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 42 nC @ 10 V | ||
Transistor Material Si | ||
Width 4.1mm | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- PH