Nexperia N-Channel MOSFET, 44 A, 60 V, 4-Pin LFPAK, SOT-669 PSMN017-60YS,115
- RS Stock No.:
- 798-2851
- Mfr. Part No.:
- PSMN017-60YS,115
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 10 units)*
£5.15
(exc. VAT)
£6.18
(inc. VAT)
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In Stock
- Plus 7,470 unit(s) shipping from 03 November 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.515 | £5.15 |
| 100 - 190 | £0.338 | £3.38 |
| 200 - 490 | £0.322 | £3.22 |
| 500 + | £0.305 | £3.05 |
*price indicative
- RS Stock No.:
- 798-2851
- Mfr. Part No.:
- PSMN017-60YS,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 44 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | LFPAK, SOT-669 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 25 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 74 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.1mm | |
| Length | 5mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 44 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type LFPAK, SOT-669 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 25 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 74 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 20 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 4.1mm | ||
Length 5mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
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