Toshiba TK N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 TK30E06N1
- RS Stock No.:
- 796-5083
- Mfr. Part No.:
- TK30E06N1
- Brand:
- Toshiba
Bulk discount available
Subtotal (1 pack of 5 units)*
£4.11
(exc. VAT)
£4.93
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 5 unit(s) shipping from 27 October 2025
- Plus 610 unit(s) shipping from 03 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.822 | £4.11 |
| 50 - 120 | £0.748 | £3.74 |
| 125 - 245 | £0.708 | £3.54 |
| 250 - 495 | £0.644 | £3.22 |
| 500 + | £0.592 | £2.96 |
*price indicative
- RS Stock No.:
- 796-5083
- Mfr. Part No.:
- TK30E06N1
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 43 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | TK | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 15 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 53 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Length | 10.16mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 16 nC @ 10 V | |
| Width | 4.45mm | |
| Height | 15.1mm | |
Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 43 A | ||
Maximum Drain Source Voltage 60 V | ||
Series TK | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 15 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 53 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Length 10.16mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 16 nC @ 10 V | ||
Width 4.45mm | ||
Height 15.1mm | ||
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