STMicroelectronics STripFET P-Channel MOSFET, 12 A, 30 V, 3-Pin DPAK STD26P3LLH6
- RS Stock No.:
- 792-5717P
- Mfr. Part No.:
- STD26P3LLH6
- Brand:
- STMicroelectronics
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Subtotal 20 units (supplied on a continuous strip)*
£13.72
(exc. VAT)
£16.46
(inc. VAT)
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Temporarily out of stock
- 1,700 unit(s) shipping from 11 November 2025
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Units | Per unit |
|---|---|
| 20 + | £0.686 |
*price indicative
- RS Stock No.:
- 792-5717P
- Mfr. Part No.:
- STD26P3LLH6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | DPAK (TO-252) | |
| Series | STripFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 45 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 40 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.6mm | |
| Typical Gate Charge @ Vgs | 12 nC @ 4.5 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Width | 6.2mm | |
| Height | 2.4mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type P | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type DPAK (TO-252) | ||
Series STripFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 45 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 40 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.6mm | ||
Typical Gate Charge @ Vgs 12 nC @ 4.5 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Width 6.2mm | ||
Height 2.4mm | ||
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