N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK STMicroelectronics STB36NM60ND
- RS Stock No.:
- 792-5701
- Mfr. Part No.:
- STB36NM60ND
- Brand:
- STMicroelectronics
Subtotal (1 unit)*
£1.75
(exc. VAT)
£2.10
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 1 + | £1.75 |
*price indicative
- RS Stock No.:
- 792-5701
- Mfr. Part No.:
- STB36NM60ND
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 29 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 110 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 190 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 80.4 nC @ 10 V | |
| Width | 9.35mm | |
| Transistor Material | Si | |
| Height | 4.6mm | |
| Series | FDmesh | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 29 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 190 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 80.4 nC @ 10 V | ||
Width 9.35mm | ||
Transistor Material Si | ||
Height 4.6mm | ||
Series FDmesh | ||
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