N-Channel MOSFET, 5 A, 650 V, 3-Pin DPAK STMicroelectronics STD7N60M2
- RS Stock No.:
- 791-9295
- Mfr. Part No.:
- STD7N60M2
- Brand:
- STMicroelectronics
Stock information currently inaccessible
- RS Stock No.:
- 791-9295
- Mfr. Part No.:
- STD7N60M2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 950 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 60 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Length | 6.6mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 8.8 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 6.2mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.4mm | |
| Series | MDmesh M2 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 5 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 950 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 60 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Length 6.6mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 8.8 nC @ 10 V | ||
Transistor Material Si | ||
Width 6.2mm | ||
Minimum Operating Temperature -55 °C | ||
Height 2.4mm | ||
Series MDmesh M2 | ||